Bulg. J. Phys. vol.27 no.S3 (2000), pp. 128-131



On Transport Properties of Granular Nix-(SiO2)1-x Thin Films

H. Chiriac, M. Lozovan, M. Urse, F.V. Rusu, A.-E. Moga
National Institute of Research & Development for Technical Physics, Iasi, Romania
Abstract. The transport behavior of the metallic and non-metallic components of highly disordered systems shows a specific dependence on the composition and microstructure length scale. This has been demonstrated for resistivity, relative electrical resistance (ΔR/R) and Hall effect for Nix-(SiO2)1-x thin films. In this paper the electrical properties as well as the galvanomagnetic properties for Nix-(SiO2)1-x thin films with Ni atomic fraction x near the percolation threshold were investigated. This class of metal-insulator granular films may be interesting for applications in the field of miniature sensors.

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