Bulg. J. Phys. vol.27 no.S3 (2000), pp. 183-186



Temperature Dependence of Photo VAC of Vidicon Target on the Base of a-Si:H

M.A. Afrailov1, I. Tapan1, U.S. Bobohadjaev2
1Uludağ Üniversitesi, Fizik Bölümü, 16059 Görükle, Bursa, Turkey
2Department of Physics, Namangan State University, 716000 Namangan, Uzbekistan
Abstract. Density of states, g(E), in the split of mobility determine a photo electrical properties of a hydrogenated amorphous silicon (a-Si:H). We show that the analysis of photo VAC, measured in the different temperatures, is allowed to discover the properties of g(E) and to determine energy position and density of states in them. An activation energy and the value of a multiplication factor have been determined as 0.35?0.4 eV and 1018 cm-3 eV-1 respectively. By considering the activation energy of dark conductivity, we have found the density of states which are related to EV are ΔE = 0.60–0.65 eV.

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