Bulg. J. Phys. vol.27 no.S3 (2000), pp. 187-190



Vibrating Bonds and the Fermi Level in Pseudodoped a-Si:H

M.A. Afrailov1, N. Derebasi1, R.G. Ikramov2
1Uludağ Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü, 16059 Görükle, Bursa, Turkey
2Namangan State University, Department of Physics, 716000 Namangan, Uzbekistan
Abstract. Shifts of the Fermi level, after external influence in the dependence on concentration and charged state defects of the pseudodoped a-Si:H have been studied. It is indicated that the shifts of the Fermi level after optical and thermal (not high temperatures) effects depend on the concentration on defects, which were in the position D+. The maximum values in the temperature dependence on electrical conductivity (at the temperature near T = 300 K) of the weak p-type pseudodoped a-Si:H have been initially recorded . The position of D+ defects was determined by the neutral electrical condition and it has been suggested a model explaining the dependence on the shifts of EF changes of the concentration on defects after external influence.

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