Bulg. J. Phys. vol.21 no.1-2 (1994), pp. 050-058

On a Simplified Analysis of the Effective Electron Mass in Quantum Wires of Opto-Electronic Materials in the Presence of a Parallel Magnetic Field

K.P. Ghatak, D. Bhattacharyya
Department of Electronics and Telecommunication Engineering, Faculty of Engineering and Technology, Jadavpur University, Calcutta - 700 092, India
Abstract. An attempt is made to study the effective electron mass at the Fermi level in quantum wires of optoelectronic materials in the presence of a parallel magnetic field on the basis of a newly derived ID-electron dispersion law. It is found, taking n-Hg1-xCdxTe and In1-xGaxAsyP1-y lattice matched to InP as examples, that the effective Fermi level mass depends on the size quantum numbers in addition to Fermi energy due to the presence of magnetic field. The effective masses corresponding to different subbands increase with increasing electron concentration and decreasing film thickness in various ways. Besides the numerical values of the masses in quaternary alloys are greater than those of the same for ternary compounds. In addition, the corresponding well-known results of quantum wires of wide gap materials in the absence of magnetic field have also been obtained as special cases of our generalized formulation under certain limiting conditions.

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