Bulg. J. Phys. vol.21 no.1-2 (1994), pp. 087-095

Preparation of Hydrogenated Amorphous Silicon by Homogeneous Chemical Vapour Deposition

S. Koynov, A. Toneva
Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Shose Blvd., 1784 Sofia, Bulgaria
Abstract. The paper presents a study on the kinetics of a Homogeneous CVD process for a-Si:H preparation. The growth rate of a-Si:H films {on substrates) versus SiH4-gas temperature is investigated under various gas pressures. The rates of two by-way processes: a-Si film deposition (on the reactor walls) and the (SiHx)n powder formation (in the gas phase) are also investigated in dependence on gas temperature and ptessure. The correlations between all these dependencies are used to establish a set of the optimum gas phase conditions for high-quality a-Si:H film preparation at reasonable deposition rates.

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