Abstract. We present Monte Carlo based calculations of electron transport in InAs, AlAs and InAlAs based devices. The calculations are performed using a three valleys ensemble Monte Carlo model that includes numerical formulations of the phonon scattering rates and ionized impurity scattering rates. Calculations are made for the zincblende phase of these materials. For all materials, we find that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field. This critical field is strongly dependent on the material parameters. Results from the various materials are finally compared.

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