Bulg. J. Phys. vol.27 no.1 (2000), pp. 001-006

Silicon On Insulator (SOI), the New Silicon Technology

J. Stoemenos
Aristotle University of Thessaloniki, Physics Department, 54006 Thessaloniki, Greece
Abstract. The present status and the state of the art of the Silicon On Insulator (SOI) teclmology are presented. The advantages and the disadvantages of the SOI teclmology is discussed, as well as the reasons for the delay this technology to enter in integrated circuit production. The three most important commercially available types of SOI wafers are is presented . The physico-chemichal mechanisms involved in the realization of these wafers are presented. The significant difference in the formation of thermally grown oxide and the buried oxide (BOX) produced by high dose oxygeri implantation in silicon (SIMOX) will be highlighted.

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