Abstract. In this study of the Se-Te-Sn ternary systems of chalcogenide glasses, the electrical and optical properties (absorption and energy band gap), with various Sn concentrations reported. The composition Se₇₀Te_30-xSn_x (x = 0, 5, 10, and 15) has been chosen for the investigation of the electrical and optical characteristics of glassy semiconductors. The research involves creating chalcogenide glasses in the Se-Te binary system with various tin (Sn) compositions by quenching technique. The four selected compositions (x = 0, 5, 10, and 15) allow for a systematic evaluation of the effect of tin (Sn) content on the electrical and optical properties of the glasses. The distinctive electrical and optical characteristics of chalcogenide glasses make them interesting materials for use in various applications, such as optoelectronics and photonics. We use the melt-quenching method to create chalcogenide glasses. High-purity (99.999%) elemental Se, Te, and Sn were used for the formation of the samples, which were then heated and quenched. The prepared glasses will next go through a comprehensive characterization for their XRD, electrical conductivity and optical energy band gap. A controlled variation in Sn concentration was performed to investigate its influence on the electrical and optical band gaps of Se-Te-Sn chalcogenide glasses. The outcomes will advance knowledge of amorphous nature and offer ideas into their potential and technical uses. In general, this study of the electrical and optical characteristics of Se₇₀Te_30-xSn_x (x = 0, 5, 10, and 15) chalcogenide glasses will strengthen the knowledge of glassy chalcogenide-semiconductor research and open the door for their utilization in the field of optoelectronic and photonic devices.

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