M.M. Gospodinov¹, V. Marinova¹, I. Yanchev², A.N. Anagnostopoulos³, K. Kyritsi^3
1Bulgarian Academy of Sciences, Solid State Physics Institute, Sofia 1784, Bulgaria
²Semiconductor Physics Dept. Faculty of Physics, St. Kliment Ohridski Univ., Sofia, Bulgaria
³Physics Dept, Aristotle Univ. of Thessaloniki, GR54006 Thessaloniki, Greece

Abstract. Large (SnS₂)_x-(SnSe₂)_1-x crystals were grown using the vertical Bridgman technique. The composition index x was varied from 0 to 1 (x=0.0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1.0). The colour of the crystals grown by this method was changing from orange-yellow to black with increasing x. They possessed a pronounced layered structure with the cleavage plane perpendicular to the c-crystallographic axis. A SEM-study combined with an EDAX analysis confirms these results.

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