Bulg. J. Phys. vol.25 no.3-4 (1998), pp. 171-176

A Study of Defect Structure of Sputter-Deposited SnOx Film Using the Doppler Broadening of the Annihilation Line

N. Nancheva1, P. Docheva1, M. Misheva2, N. Djourelov2
1Department of Physics, Technical University, 7017 Rousse, Bulgaria
2Faculty of Physics, University of Sofia, 5 J. Bourchier Blvd, 1164 Sofia, Bulgaria
Abstract. SnOx films, grown on tin substrates via d.c. magnetron sputtering have been studied using Doppler broadening of the annihilation line. The results showed that the oxygen and the substrate bias play an important role in the film growth. The mechanical strength and the adhesion of the films obtained at negative substrate bias are higher.

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