Bulg. J. Phys. vol.25 no.3-4 (1998), pp. 177-180

Some Properties of Thin Films of Titanium Monoxide Synthesized by Reactive Evaporation

K.G. Grigorov1, M. Stoyanova1, I. Martev1, G. Grigorov1, L. Drajeva-Grigorova1, R. Spoken2
1Institute of Electronics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd, 1784 Sofia, Bulgaria
2LISE, Fac. Universitaires, N-D. de la Paix, Rue de Bruxelles 61, 5000 Namur, Belgium
Abstract. Titanium monoxide films were deposited on silicon at temperature 300°C by reactive evaporation. The film composition was determined by Auger electron spectroscopy (AES). X-ray diffraction (XRD) investigation of as-deposited films reveals that all films are amorphous; the resistivity of films have the relatively high value of 550 μΩ.cm. After annealing at a temperature of 600°C, the films were transformed into a polycrystalline fee structure with a lattice parameter of 0.4166 nm. A considerable decrease of the resistivity to a value of 240 μΩ.cm was found after the thermal treatment.

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