Bulg. J. Phys. vol.22 no.1-2 (1995), pp. 038-043



Effect of Substrate Temperature on Stability of HOMOCVD A-Si:H

P. Danesh1, A. Toneva2
1Institute of Solid State Physics, Bulgarian Academy of Sciences
2Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72, Tzarigradsko Shose, 1784 Sofia, Bulgaria
Abstract. Having assumed that the amount of microvoids in a-Si:H plays the key role in the stability of the material we demonstrate a technological control of the Staebler-Wronski effect for the films grown by homogeneous CVD. The degree of the light-induced degradation is governed by changing the substrate temperature. The other deposition parameters are in the ranges, which provide a device-grade material. The study of the electronic and structural properties points out that the most characteristic feature of the samples, which do not show any light-induced degradation, is their extremely low amount of microvoids.

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