Bulg. J. Phys. vol.19 no.1-2 (1992), pp. 068-071

The Influence of Velocity Growth on the Si-content and Coercivity of NiFe-Si Films

M. Vatzkitcheva1, L. Vatzkitchev1, St. Marinov2
Faculty of Physics, University of Sofia, 5, J. Bourchier Blvd, Sofia 1126, Bulgaria
Abstract. The rf-sputtered NiFe-Si alloy thin films were investigated. The thickness of the films was around 110 nm, the velocity of deposition was changed from 0.11 nm/s to 0.92 nm/s. The coercive force Hc was examined by galvanomagnetic measurements. It was found that Hc decreases and the content of Si increases when the growth velocity increases. The magnetic behaviour was explained by structural effects during the film growth.

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