Bulg. J. Phys. vol.19 no.1-2 (1992), pp. 072-077

Optical Properties of a-Si:H Deposited by Homogeneous CVD Method

A. Toneva, Ts. Mihailova
Central Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72, Tzarigradsko shose, 1784 Sofia
Abstract. The optical properties of a-Si:H films deposited by homogeneous CVD method are examined depending on the substrate temperature Ts. The optical parameters are calculated by the transmission spectrum taking into account the nonhomogeueity of the films. A deviation from the linearity has been observed in the dependence of the optical band gap Eg on the substrate temperature. The refractive index and coefficient B, determined from the Tauc correlation, are not monotonous functions of Eg. This behavior is connected with the peculiarities of the deposition method.

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