Bulg. J. Phys. vol.19 no.1-2 (1992), pp. 078-081

Rapid Thermal Annealing of CVD-Molybdenum Thin Films

K.A. Gesheva1, V. Abrosimova2
1Central Laboratory for Solar Eriergy and New Energy Sources, Bulgarian Academy of Sciences, 72, Tzarigradsko shose, Sofia 1784, Bulgaria
2Institute of Technological Problems in Microelectronics, 1424.32 Chernogolovka, Moskow area, Russian Federation
Abstract. Molybdenum thin films deposited in silicon by thermal decomposition of Mo(Co)6 at atmospheric pressure have additionally undergone a rapid thermal annealing (RTA) in argon atmosphere. Their surface resistance and specific resistivity have been studied in dependence of the annealing temperature.

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