Bulg. J. Phys. vol.19 no.3-4 (1992), pp. 049-056



Characterization of Silicon Nitride Films Deposited onto Silicon

V. Lasarova1, G. Beshkov1, K.A. Gesheva2
1Institute of Solid State Physics, Bulgarian Academy of Science
2Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria
Abstract. The paper presents results of the kinetics study of Si3N4 thin films deposited in APCVD - industrial type reactor in SiH4-NH3-H2 gas system. The concentration of the silane was in the range of 1-3×10-4 mol.% when the deposition temperature is in the range of 700-1150°C. A correlation between the technological parameters and films characteristics is drawn and the surface morphology of the films is studied.

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