Bulg. J. Phys. vol.19 no.3-4 (1992), pp. 067-073



A Simple Model of MOSFET's Exposed to High Doses of γ-Irradiation

K.G. Grigorov
Institute of Microelectronics and Optoelectronics, Warsaw Technical University, ul. Koszykowa 75, 00-662 Warsaw, Poland
Abstract. A simple quantitative model predicting fairly well changes of MOSFET's characteristics by high-dose γ-irradiation is exposed. The dose of irradiation ranges from 10 kGy to 10 MGy.

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