Bulg. J. Phys. vol.28 no.3-4 (2001), pp. 147-152
Microhardness-depth Profiles of Si/SiC Layered Structures Prepared
E. Trifonova1, T. Angelova1, R. Yakimova2, E. Jansen2
1Faculty of Physics, St. Kliment Ohridski University of Sofia, 5 J. Bourchier Blvd, 1164 Sofia, Bulgaria
2Department of Physics and Measurement Technology, 1FM, Linkoping University, S-581 83 Linkoping, Sweden
go back1Faculty of Physics, St. Kliment Ohridski University of Sofia, 5 J. Bourchier Blvd, 1164 Sofia, Bulgaria
2Department of Physics and Measurement Technology, 1FM, Linkoping University, S-581 83 Linkoping, Sweden
Abstract. Microhardness-depth profiles of Si/SiC layered structures prepared by chemical vapour deposition are studied by indenting with the pyramids of Knoop and of Vickers. In this way it is possible to reveal strained regions resulting from the large lattice mismatch between Si and SiC.