Bulg. J. Phys. vol.16 no.3 (1989), pp. 310-316


Mask-Edge Redistribution of Target Atoms during Ion Implantation of 80 keV As+ into Si

D. Danailov
Institute of Electronics, Bulgarian Academy of Sciences, 72 Lenin blvd, Sofia 1784
Abstract. The 2D-dopant and defects distributions resulting from 80 keV ion implantation of As+ ions into Si through a high-edge mask are presented. They are obtained by means of an efficient computing procedure combining the results of a Monte Carlo simulation. The computer codes TRIM are used. The 2D-target atom redistribution is obtained as a result of cascade binary collisions. Using a computer simulation, the effect of near-mask-edge target atom deplelion is revealed. This effect is related to recoil phenomena and can be explained on the basis of a simplified model given below.

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