Bulg. J. Phys. vol.33 no.1 (2006), pp. 48-54

Defect Formation in 18 MeV Electron Irradiated MOS Structures

S. Kaschieva1, V. Gueorguiev1, E. Halova2, S. N. Dmitriev3
1Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., BG-1784 Sofia, Bulgaria
2Technical University, 8 Kl. Ohridski Blvd., BG-1797 Sofia, Bulgaria
3Joint Institute of Nuclear Research, Flerov Laboratory of Nuclear Reactions, Dubna, Moscow region 141980, Russia
Abstract. Defect formation in MOS structures irradiated with 18~MeV electrons has been investigated by high frequency capacitance-voltage (HF C/V) and deep level transient spectroscopy (DLTS) methods. It has been shown that high-energy electron irradiation decreases the oxide capacity as well as the positive charge in the oxide and creates surface states at the Si-SiO2 interface of the samples. The energy and capture cross section of the radiation-induced traps created by high-energy electron irradiation at the Si-SiO2 interface of the samples have been determined. The nature of these radiation induced traps has also been discussed. It has also been demonstrated that oxygen surface density at Si-SiO2 interface depends on the kind of the oxide as well as the electron dose irradiation.

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