Bulg. J. Phys. vol.35 no.1 (2008), pp. 58-67


Comparative X-ray Photoelectron Spectroscopy Study of Plasma Enhanced Chemical Vapor Deposition and Micro Pressure Chemical Vapor Deposition of Phosphorus Silicate Glass Layers after Rapid Thermal Annealing

G. Beshkov1, V. Krastev2, D. Gogova3, E. Talik4, M. Adamies4
1Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
2Institute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
3Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko chaussee Blvd., 1784 Sofia, Bulgaria
4"A. Cheikovski" Institute of Physics, University of Silezia, Universitetska 4, Katovitse, Poland
Abstract. In this paper the bonding state of Phosphorus Silicate Glass (PSG) layers obtained by two different technological approaches, i.e., in two types of reactors: Plasma Enhanced Chemical Vapor Deposition (PECVD) and Micro Pressure Chemical Vapor Deposition (µPCVD) are investigated employing XPS and AES. The PSG layers are deposited at 3800C and 4200C in corresponding reactors. XPS and AES analyses show that Si2p peak recorded from PECVD layers are not as expected at their position characteristics of silicon dioxide but instead they are at the characteristic of elemental silicon. Plasma enhancement during deposition leads to less oxidized and more inhomogeneous layer. After rapid thermal annealing the Si2p peak is situated at position characteristic of silicon dioxide.

Full-text: PDF

go back