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Bulgarian Journal of Physics
Print: 1310-0157 Online: 1314-2666
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RECOGNIZED BY THE EUROPEAN PHYSICAL SOCIETY 
Bulg. J. Phys. vol.40 no.4 (2013), pp. 307-324
p- or n-Doping Effects on the Phonon Spectrum of Single- and Bi-Layer Graphene
A.T. Apostolov1, I.N. Apostolova2, J.M. Wesselinowa3
1University of Architecture, Civil Engineering and Geodesy, Faculty of Hydrotechnics, 1 Hr. Smirnenski Blvd., 1046 Sofia, Bulgaria
2University of Forestry, Faculty of Forest Industry, 10 Kl. Ohridsky Blvd., 1756 Sofia, Bulgaria
3University of Sofia, Faculty of Physics, 5 J. Bouchier Blvd., 1164 Sofia, Bulgaria
go back1University of Architecture, Civil Engineering and Geodesy, Faculty of Hydrotechnics, 1 Hr. Smirnenski Blvd., 1046 Sofia, Bulgaria
2University of Forestry, Faculty of Forest Industry, 10 Kl. Ohridsky Blvd., 1756 Sofia, Bulgaria
3University of Sofia, Faculty of Physics, 5 J. Bouchier Blvd., 1164 Sofia, Bulgaria
Abstract. Using a microscopic model and the Green's function technique we have studied the phonon properties of ion doped single- and bilayer graphene. There are differences in the behavior of the energy and damping of the G and 2D modes in a p- and n-doped single-layer graphene. A microscopic explanation is proposed. The influence of the electron-phonon interaction is discussed. We report also phonon energy and damping renormalization in bi-layer graphene as a function of doping. The results are in qualitative agreement with the experimental data.