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Bulgarian Journal of Physics
Print: 1310-0157 Online: 1314-2666
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RECOGNIZED BY THE EUROPEAN PHYSICAL SOCIETY 
Bulg. J. Phys. vol.43 no.1 (2016), pp. 054-063
Self-Catalytic Growth of InN Nanowires
P.T. Terziyska1, K.S.A. Butcher2,3
1Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
2Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Rd, Thunder Bay, ON P7B 5E1, Canada
3MEAglow Ltd. Box 398 2400 Nipigon Rd., Thunder Bay, ON P7C 4W1, Canada
go back1Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
2Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Rd, Thunder Bay, ON P7B 5E1, Canada
3MEAglow Ltd. Box 398 2400 Nipigon Rd., Thunder Bay, ON P7C 4W1, Canada
Abstract. In this paper we review our results on self-catalytic growth of InN nanowires, grown from In metal rich conditions by the Migration Enhanced Afterglow (MEAglow) technique. We present a short overview of the different growth methods that have been applied to produce InN nanowires and we discuss the self-catalytic growth mechanism for InN nanowires. We then present our experimental results on the self-catalytic and selective area growth of InN nanowires that show evidence for the nucleation and the growth mechanism of the InN nanowires under In metal rich conditions. Selective area growth on sapphire substrates is also discussed.