Ramesh Sopinti¹, Satyanarayana Talam², Nagarjuna Gunnam³, Bejjipurapu Chandrasekhar¹, Rajeswara Rao Darsi⁴, G. Bhanu Kiran⁵, B.V. Raghavaiah^6
1Department of Physics, Acharya Nagarjuna University, Nagarjuna Nagar, Guntur, 522510, Andhra Pradesh, India
²Department of ECE, Lakireddy Bali Reddy College of Engineering (Autonomous), Mylavaram-521230, NTR District, Andhra Pradesh, India
³Department of Chemistry, Govt. Degree College, Avanigadda-521121, Krishna District, Andhra Pradesh, India
⁴Department of Physics, Government Junior College, Tiruvuru-521235, Krishna District, Andhra Pradesh, India
⁵Department of Mechanical Engineering, RGUKT-Nuzvid Campus, Rajiv Gandhi University of Knowledge Technologies-AP, Nuzvid-521201, Andhra Pradesh, India
⁶Department of Physics, RGUKT-Ongole Campus, Rajiv Gandhi University of Knowledge Technologies-AP, Ongole-523001, Andhra Pradesh, India

Abstract. A glass system with the composition 20ZnO-(25-x)TeO₂-55B2O₃:x mol% CoO, where `x' varies from 0.3 to 1.2, was synthesized using the conventional melt-quench technique. The prepared glass samples were characterized by XRD and SEM, confirming their non-crystalline state. This study experimentally measured three key dielectric properties over a frequency range of 1 to 100 kHz and a temperature range from room temperature to 200°C. The results show an increasing trend in these parameters with rising CoO content, indicating a higher degree of disorder due to the presence of trivalent cobalt ions, which act as network modifiers at higher concentrations. The variation in activation energy and other dielectric properties is analysed in detail, considering the oxidation states of cobalt ions and the resulting structural changes within the glass matrix. These findings suggest that the tailored dielectric properties make the glass system suitable for various electronic applications.

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