Bulg. J. Phys. vol.35 no.3 (2008), pp. 191-197

Plasma-Induced Etching of Silicon Surfaces

A.K. Yousif, O.A. Hamadi
Laser Research Unit, University of Technology, Baghdad, Iraq
Abstract. In this work, p-type silicon surface was etched to (100) crystalline direction using plasma-induced etching technique. The structural characteristics of the etched surface were presented and studied. The optimum conditions to achieve etching process on p-type silicon surface are determined by 750 W processing power and 15 mtorr gas pressure required for generation of plasma. According to the reasonable quality of the obtained samples and comparing to other techniques, the plasma-induced etching is simple and low cost technique as well as large dimensions of etched substrates can be produced.

Full-text: PDF

go back